cesdlc5v 0at7 low capacitance for esd protection description the cesdlc 5 v0 at7 is designed to protec t voltage sensitive components from esd. excellent clamping capability, low leakage, and fast response time provide best in class protection on designs that are exposed to esd. because of its small size, it is suited for use in cellular phones, mp3 players, digital cameras and many other portable applications wh ere board space is at a premium. features z tow separate unidirectional configurations for protection z low leakage current < 0.1 a @ 5 volts z small package z low capacitance z complies to usb 1.1 low speed & full speed specifications z these are pb-free devices benefits z protect tow lines against transient voltage conditions z minimize power consumption of the system z minimize pcb board space typical applications z instrumentation equipment z serial and parallel ports z microprocessor based equipment z notebooks, desktops, servers z cellular and portable equipment marking:5c sot- 723 jiangsu changjiang electronics technology co., ltd sot-723 plastic-encapsulate diodes 1 2 3 a,feb,2012
electrical characteristics (ta = 25 unless otherwise noted) symbol parameter i pp maximum reverse peak pulse current (note 1) v c clamping voltage @ i pp v rwm working peak reverse voltage i r maximum reverse leakage current @ v rwm v br breakdown voltage @ i t i t test current maximum ratings (ta =25 unless otherwise noted) parameter symbol limit unit steady state power -- 1 diode (note 2) p d 150 mw thermal resistance junction ? to ? ambient above 25 c, derate r ja 833 /w maximum j unction t emperature t j 150 operating junction and stor age t emperature r ange t j, t stg -55 ~ +150 lead solder temperature (10 seconds duration) t l 260 stresses exceeding m aximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above the r ecommended. operating c onditions is not implied. extended exposure to stresses above the recommended o perating c onditions may affect device reliability. electrical characteristics (ta = 25c unless otherwise noted, v f = 0.9 v max. @ i f = 10ma for all types) breakdown voltage v br @ 1ma(volts) leakage current i rm @ v rm v c max @i pp capacitance @vr=0v bias (pf) (note 3) capacitance @vr=3v bias (pf) (note 3) device device marking min mon max v rwm i rwm ( a) v c (v) i pp (a) max max cesdlc 5v0at7 5c 6.1 6.7 7.2 5.0 0.1 11 2 13 9 1. non-repetitive current per figure 1. 2. only 1 diode under power. for all 2 diodes under power, p d will be 50 %. mounted on fr-4 board with min pad. 3. capacitance of one diode at f = 1mhz, t a = 25c a,feb,2012
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